20A, 1200V SiC Schottky Barrier Diode

The SCP20120DN4 is a SiC schottky barrier diode. Itis base on silicon carbide material, and its switchingbehavior is independent with temperature. The devicehas superfast recovery property and lower forwardvoltage drop, it can be used in switching power supply, solar inverter, PFC and UPS.

40A, 1200V SiC Schottky Barrier Diode

The SCH40120DN4 is a SiC schottky barrier diode. Itis base on silicon carbide material, and its switchingbehavior is independent with temperature. The devicehas superfast recovery property and lower forwardvoltage drop, it can be used in switching power supply, solar inverter, PFC and UPS.

30A, 1200V SiC Schottky Barrier Diode

The SCH30120DN4 is a SiC Schottky Barrier Diode.It is base on silicon carbide material, and its switchingbehavior is independent with temperature. The devicehas superfast recovery property and lower forwardvoltage drop, it can be used in switching power supply, solar inverter, PFC and UPS.

20A, 1200V SiC Schottky Barrier Diode

The SCH20120DN4 is a SiC schottky barrier diode. Itis base on silicon carbide material, and its switchingbehavior is independent with temperature. The devicehas superfast recovery property and lower forwardvoltage drop, it can be used in switching power supply, solar inverter, PFC and UPS.

4A, 650V SiC Schottky Barrier Diode

The SCD465S4 is a SiC Schottky Barrier Diode. It is base on silicon carbide material, and its switchingbehavior is independent with temperature. The devicehas superfast recovery property and lower forwardvoltage drop, it can be used in switching power supply, solar inverter, PFC and UPS.

900V 9A N-Channel Enhancement Mode Power MOSFET

The SQPF9N90B is an N-Channel enhancement mode power MOSFET which using proprietary planar stripe and DMOS technology.
This MOSFET has low static on-resistance and highavalanche energy strength. This device provideexcellent switching performance for UPS,DC-DCconverters and AC-DC power supply.

1200V 4A N-Channel Enhancement Mode Power MOSFET

The SQPF4N120 is an N-Channel enhancement modepower MOSFET, it has low static on-resistance andhigh avalanche energy strength. This device provideexcellent switching performance for switched modepower supplies, active power factor correction andelectronic lamp ballasts.

900V 4A N-Channel Enhancement Mode Power MOSFET

The SQPF4N90C2 is an N-Channel on-resistance andhigh avalanche energy enhancement mode power MOSFET which using proprietary planar stripe andDMOS technology. This MOSFET has low staticstrength. This device provide excellent switchingperformance for switched mode power supplies, activepower factor correction and electronic lamp ballasts.