600V SiC Schottky Diode Module

The SiC Schottky Diode Module SOT-227A package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.
These SiC Schottky Diode Module series are ideally suited for Energy Storage ,High Power inverters, Power Quality Management and other applications where switching losses are significant portion of the total losses.

1200V SiC Schottky Diode Module

The SiC Schottky Diode Module 7SM-3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.
These SiC Schottky Diode Module series are ideally suited for Energy Storage ,High Power inverters, Power Quality Management and other applications where switching losses are significant portion of the total losses.

1200V 25mΩ N-Channel SiC Power MOSFET

The SCQH025N120 is a high blocking voltage N-Channel SiC power MOSFET. This device provide excellent performance for high voltage power supplies or pulse circuits.

1200V 25mΩ N-Channel SiC Power MOSFET

The SCQH025N120L4 is a high blocking voltage N-Channel SiC power MOSFET. This device provide excellent performance for high voltage power supplies or pulse circuits.

1200V 40mΩ N-Channel SiC Power MOSFET

The SCQH040N120 is a high blocking voltage N-Channel SiC power MOSFET. This device provide excellent performance for high voltage power supplies or pulse circuits.

1700V 45mΩ N-Channel SiC Power MOSFET

The SCQH045N170 is a high blocking voltage N-Channel SiC power MOSFET. This device provide excellent performance for high voltage power supplies or pulse circuits.

1200V 70mΩ N-Channel SiC Power MOSFET

The SCQH070N120 is a high blocking voltage N-Channel SiC power MOSFET. This device provide excellent performance for high voltage power supplies or pulse circuits.

1200V 80mΩ N-Channel SiC Power MOSFET

The SCQH080N120 is a high blocking voltage N-Channel SiC power MOSFET. This device provide excellent performance for high voltage power supplies or pulse circuits.